The 2011 Non-Volatile Memory Technology Symposium (NVMTS 2011) will be held on November 7-9, 2011 at Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), in Shanghai, China. The symposium will provide an international forum for researchers, industrial practitioners and engineers from around the world for the exchange of information on the state-of-the-art research in non-volatile memory. The symposium will have three days’ program including keynote speeches, invited talks and contributed papers. On November 9, we will have a poster session aimed towards graduate students and post-doctoral researchers.

We are soliciting papers describing new findings or recent advances for presentation in the following topics, but are not limited to:

1. PCRAM
2. MRAM
3. RRAM/memristor
4. Flash
5. FeRAM
6. Theory and Modeling Simulation
7. New Memory Concepts

This symposium fills the need for a conference that focuses on emerging non-volatile memory technologies and advances in existing non-volatile memory technologies, rather than on a single selected technology. The purpose of this conference is to bring together leading researchers in academia and industry with innovative technologists and investing stakeholders in order to nurture a free exchange of triumphs and challenges of a variety of technologies. We hope to provide a forum for discussing all aspects of novel memory concepts.

No. 865, Chang Ning Road, SIMIT, Shanghai, China
The venue is about one hour from Pudong International Airport and 15 minutes from Hongqiao International Airport directly all by subway. More location and organization details can be found on the symposium website: http://www.nvmts2011.org or http://nvmts2011.org.