the Bund of Shanghai
11th Non-Volatile Memory Technology Symposium 2011 SIMIT, Shanghai, China
The NVMTS 2011 meeting will be held at the Conference Auditorium which is located on the 3rd floor of building No.5 of Shanghai Institute of Microsystem and Information Technology (SIMIT) within walking distance of the accommodations.
| Program of NVMTS 2011 | ||
| Sunday November 6th, 2011 | ||
| 15:00-18:30 | Registration | |
| 19:00-21:00 | Reception (Baguobuyi, 1018 Ding Xi Road) | |
| Monday November 7th, 2011 | ||
| 8:30-8:40 | Welcome and Opening Speech | |
| Chair: Stuart Parkin | ||
| Mon08:40 | 8:40-9:25 | Keynote Challenges and Opportunities of Data Storage Industries Pantelis Sophoclis Alexopoulos Data Storage Institute, A*STAR, Singapore |
| Mon09:25 | 9:25-10:10 | Keynote Advanced CMOS Development and Trend of New Class Memory Simon Yang Semiconductor Manufacturing International Corporation, China |
| 10:10-10:20 | Group Photo (The Entrance of Building No.5) | |
| 10:20-10:30 | Tea Break (3rd floor of Building No.5, Corridor) | |
| Session 1-PCRAM 1 Chair: Simone Raoux | ||
| Mon10:30 | 10:30-11:15 | Keynote Toward Big Chance of PRAM Business Hongsik Jeong Memory Division of Samsung Electronics, Yong-in City, Kyunggi-Do, 446-711, Korea |
| Mon11:15 | 11:15-11:45 | Invited Phase Change Materials: Employing fundamental concepts of solid state physics to tailor novel electronic memories Matthias Wuttig Physics of Novel Materials, RWTH Aachen University of Technology, Germany |
| Mon11:45 | 11:45-12:15 | Invited Phase Change Random Access Memory: Materials and Device Integration Zhi-Tang Song Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China |
| Mon12:15 | 12:15-12:45 | Invited Investigation of new chalcogenide materials to improve the PCM performance V. Sousa, L. Perniola, G. Navarro, Q.Hubert, N. Pashkov, M. Suri, E. Henaff, A. Persico, F. Fillot, F. Pierre, A. Roule, S. Maitrejean, P. Michallon, C. Vallée* H. Feldis**, C. Jahan, J. F. Nodin, A. Toffoli, D. Blachier, A. Bastard**, J-C. Bastien, B. Hyot, B. André, G. Reimbold, P. Zuliani***, R. Annunziata***, B. De Salvo *CEA, LETI, MINATEC, Grenoble, France, *CNRS-LTM, Grenoble, France **STMicroelectronics, Central R&D, Crolles, France, *** STMicroelectronics, Agrate Brianza, Italy |
| 12:45-14:00 | Lunch (2nd floor of Building No.5, Canteen) | |
| Session 2-MRAM Chair: Jian-Ping Wang | ||
| Mon14:00 | 14:00-14:45 | Keynote Racetrack Memory: A High-Performance, Storage Class Memory Using Magnetic Domain-Walls Manipulated by Current Stuart Parkin IBM Research Division, Almaden Research Center, San Jose, California, USA |
| Mon14:45 | 14:45-15:15 | Invited Embedded MRAM Technology for Logic VLSI Application N. Kasai1*, S. Ikeda1,2, T. Hanyu1,3, T. Endoh1,4, H. Ohno1,2 1. Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan 2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University,Sendai, Japan 3. Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan 4. Center for Interdisciplinary Research, Tohoku University, Sendai, Japan |
| Mon15:15 | 15:15-15:45 | Invited Nano-elliptic-ring shaped magnetic tunnel junctions and their applications in MRAM designs Xiu-Feng Han Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190, China |
| Mon15:45 | 15:45-16:15 | Invited Spin-RAM for Normally-Off Computer K. Ando¹*, T. Kai², T. Kishi², N. Shimomura², H. Aikawa², M.Yoshikawa², T. Nagase², K. Nishiyama², E. Kitagawa², T. Daibou², M. Amano², S. Takahashi², M. Nakayama², S. Ikegawa², M. Nagamine², J. Ozeki², D. Watanabe², K.Yakushiji¹, H. Kubota¹, A. Fukushima¹, S. Yuasa¹, T. Nozaki¹,³, Y. Suzuki³, M. Oogane4;, S. Mizukami4;, Y. Ando4;, Y. Nakatani4;, T. Miyazaki4; and H. Yoda² 1. National Institute of Advanced Industrial Science and Technology (AIST), 2. Toshiba, 3. Osaka University, 4. Tohoku University, 5. The University of Electro-Communications |
| 16:15-16:30 | Tea Break (3rd floor of Building No.5, Corridor) | |
| Session 3-FeRAM Chair: Junji Tominaga | ||
| Mon16:30 | 16:30-17:15 | Keynote Overview of FeRAMs: Trends and Perspectives Daisaburo Takashima Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp., 2-5-1, Kasama, Sakae-ku, Yokohama 247-8585, Japan |
| Mon17:15 | 17:15-17:45 | Invited Current Status of Ferroelectric Random Access Memories Hiroshi Ishiwara Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Republic of Korea |
| 18:00-21:00 | Banquet (Music Restaurant, 438 Wu Yi Road ) | |
| Tuesday November 8th, 2011 | ||
| Session 4-RRAM 1 Chair: J. Suñé | ||
| Tue08:30 | 8:30-9:15 | Keynote Promises and challenges of Memristive switches J. Joshua Yang HP Labs, Palo Alto, CA 94304, USA |
| Tue09:15 | 9:15-9:45 | Invited Metal Oxide Hetero Junction Nonvolatile Memory Dongmin Chen 4DS Inc., USA |
| Tue09:45 | 9:45-10:15 | Invited Self-Rectifying Unipolar HfOx Based RRAM Built by Fab-Available Materials Hong-Yu Yu*, X.A. Tran School of EEE, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798 |
| 10:15-10:30 | Tea Break (3rd floor of Building No.5, Corridor) | |
| Session 5-Flash 1 Chair: Daisaburo Takashim | ||
| Tue10:30 | 10:30-11:15 | Keynote Flash Memory: the Journey Continues Stefan K Lai Xinnova Technology Ltd., Shanghai, China |
| Tue11:15 | 11:15-11:45 | Invited Highly reliable Low Power Storage Class Memory & NAND Flash Memory Hybrid Solid-State Drive (SSD) Ken Takeuchi Dept. of Electrical Engineering and Information Systems, University of Tokyo, Tokyo, Japan |
| Tue11:45 | 11:45-12:15 | Invited Overview of Charge-Trapping NAND Flash and 3D NAND Flash Hang-Ting Lue Nano Technology R&D Dept. (ME110)/Emerging Central Lab, Macronix International Co., Ltd,, Taiwan |
| 12:30-14:00 | Lunch (2nd floor of Building No.5, Canteen) Posters Displayed |
|
| 14:00-16:00 | Poster Session Chair: Hong-Yu Yu & Bo Liu | |
| Session 6–New Concepts Chair: Dong-Min Chen | ||
| Tue16:00 | 16:00-16:45 | Keynote Optimization of SSDs and Systems and the Value of Better NVM Rick Coulson Storage Technologies Group, Intel Corporation, Hillsboro, Oregon 97229 USA |
| Tue16:45 | 16:45-17:15 | Invited Bio Inspired Artificial Cognitive Memory L.P. Shi1, K.J. Yi1, Kiruthika Ramanathan1, N.Ning1, R. Zhao1, H.Z.Li2, and Z. Yang3 1. Data Storage Institute, A*STAR (Agency for Science, Technology and Research), Singapore 117608 2. Institute for Infocomm Research, A*STAR (Agency for Science, Technology and Research), Singapore 138632 3. Electrical computer engineering department, National University of Singapore, Singapore 117576 |
| Tue17:15 | 17:15-17:45 | Invited MTJ-Based Nonvolatile Logic-in-Memory Architecture and Its Application Takahiro Hanyu1,2 1. Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan 2. Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan |
| Tue17:45 | 17:45-18:15 | Invited Magnetic Logic and Computation using Magnetic Tunnel Junctions Jian-Ping Wang University of Minnesota, USA |
| 18:15-19:30 | Dinner (Yongxiang Restaurant, 1271 Ding Xi Road) | |
| 19:45 | The Bund Tour | |
| Wednesday November 9th, 2011 | ||
| Session 7-PCRAM 2 Chair: Andrea Lacaita | ||
| Wed08:30 | 8:30-9:15 | Keynote Phase-change memories: new features to catch opportunities in the memory market Agostino Pirovano, Robert Bez Micron Technology, Inc., Italy |
| Wed09:15 | 9:15-9:45 | Invited Materials Engineering for PCRAM Simone Raoux1*, Huai-Yu Cheng2 and Jury Sandrini3 1. IBM/Macronix PCRAM Joint Project, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA 2. IBM/Macronix PCRAM Joint Project, Macronix Emerging Central Lab., Macronix International Co., Ltd. 16 Li-Hsin Rd. Science Park, Hsinchu, Taiwan 3. Turin Polytechnic University, Turin, Italy |
| Wed09:45 | 9:45-10:15 | Invited Entropy-controlled phase-change memory Junji Tominaga*, P. Fons and A. Kolobov Green Nanoelectronics Center, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, AIST, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, 305-8562, Japan |
| 10:15-10:30 | Tea Break (3rd floor of Building No.5, Corridor) | |
| Session 8-Flash 2/RRAM 2 Chair: Hang-Ting Lue | ||
| Wed10:30 | 10:30-11:00 | IInvited Charge-trapping based next generation High-performance nonvolatile memory Ming Liu Institute of Microelectronics of Chinese Academy of Sciences, China |
| Wed11:00 | 11:00-11:30 | Invited High Performance Charge-Trapping Flash Memory with Highly-Scaled Trapping Layer Albert Chin1*, C. Y. Tsai1, and Hong Wang2 1. Dept. of Electronics Eng., National Chiao-Tung University, Hsinchu, Taiwan 2. School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore |
| Wed11:30 | 11:30-12:00 | Invited Logic-based Mega-bit CuxSiyO emRRAM with Excellent Reliability and Scalability Lin Yinyin1*, Yang Lingming1, Song Yali1, Wang Yanliang1 , Huang Ryan2, Zou Qingtian2 and Wu Jingang2 1. ASIC and System State Key Laboratory Dept. Microelectronics, Fudan University Shanghai, 201203, China; 2. Technology Research & Development Center Semiconductor Manufacturing International Corp. Shanghai, 201203, China |
| Wed12:00 | 12:00-12:30 | Invited From failure to function: learning from dielectric breakdown for improved understanding of resistive switching memories J. Suñé1*, S. Long1, 2, E. Miranda1, D. Jiménez1 and M. Liu2 1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain 2. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China |
| 12:30-14:00 | Lunch (2nd floor of Building No.5, Canteen) | |
| Session 9-PCRAM 3 Chair:De Salvo Barbara | ||
| Wed14:00 | 14:00-14:30 | Invited Electrical properties and microscopic structure of amorphous chalcogenides D. Ielmini and A. L. Lacaita(1)* Dipartimento di Elettronica e Informazione and IU.NET, Politecnico di Milano, Piazza L. da Vinci, 32 – 20133 Milano, Italy (1) also with IFN-CNR, Milano, Italy |
| Wed14:30 | 14:30-15:00 | Invited MOCVD GST for High Speed and Low Reset Current Phase Change Memory Applications J. F. Zheng*1, J. Reed2, J. Ricker2, W. Czubatyj2, C. Schell2, R. Sandoval2, P. Chen1, W. Hunks1, W. Li1, J. Cleary1, S. Hudgens2, C. Dennison2, T. Lowrey2 1. ATMI Inc., 7 Commerce Drive, Danbury, CT 06810, USA 2. Ovonyx Inc., Troy, MI 48083 |
| Wed15:00 | 15:00-15:30 | Invited Tool and process developments for emerging NVRAM Koukou Suu Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. Susono, Shizuoka, 410-1231 Japan |
| 15:30-15:45 | Tea Break (3rd floor of Building No.5, Corridor) | |
| Wed15:45 | 15:45-16:15 | Invited Hybrid SSD with PCRAM Xiaohua Cheng, Chuangshi Zhou, Yining Liu* R&D Department, Netac Technology Co., Ltd., China |
| Wed16:15 | 16:15-16:45 | Invited Phase Change Memory – Its Opportunities and Challenges Ming-Hsiu Lee Macronix Emerging Central Lab, Macronix International, Taiwan |
| Wed16:45 | 16:45-17:15 | Invited Amorphisation of GeTe-based phase-change memory alloys A.V. Kolobov, P. Fons, M. Krbal, and J. Tominaga Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central-4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan |
| 17:15-17:30 | Closing Remark (Matthias Wuttig) | |
| End of Conference | ||
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